SPN02N60C3 E6433

SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS(on),max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type Package Ordering Code Marking SPN02N60C3 SOT223 Q67040-S4553 02N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.4 T A=70 °C 0.3 Pulsed drain current1) I D,pulse T A=25 °C 5.4 Avalanche energy, single pulse E AS I D=0.9 A, V DD=50 V 50 Avalanche energy, repetitive t AR1),2) E AR I D=1.8 A, V DD=50 V 0.07 Avalanche current, repetitive t AR1) I AR Drain source voltage slope dv /dt Gate source voltage Unit A mJ 1.8 A I D=1.8 A, V DS=480 V, T j=125 °C 50 V/ns V GS static ±20 V V GS AC (f >1 Hz) ±30 Power dissipation P tot T A=25 °C 1.8 W Operating and storage temperature T j, T stg -55 ... 150 °C Rev. 2.3 page 1 2005-02-21 SPN02N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - 30 - SMD version, device on PCB, minimal footprint - 110 - SMD version, device on PCB, 6 cm2 cooling area2) - 70 - 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V - 700 - Thermal characteristics Thermal resistance, junction soldering point R thJS R thJA Thermal resistance, junction ambient Soldering temperature T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=0.25 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.08 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.5 1 V DS=600 V, V GS=0 V, T j=150 °C - - 50 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=1.1 A, T j=25 °C - 2.0 2.5 Ω V GS=10 V, I D=1.1 A, T j=150 °C - 5.2 - Gate resistance RG f =1 MHz, open drain - 9 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.1 A - 1.75 - Rev. 2.3 page 2 S 2005-02-21 SPN02N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - 200 - - 90 - - 4 - - 8 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy C o(er) related3) V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related4) C o(tr) - 16 - Turn-on delay time t d(on) - 6 - Rise time tr - 3 - Turn-off delay time t d(off) - 68 - Fall time tf - 12 30 Gate to source charge Q gs - 1.6 - Gate to drain charge Q gd - 4 - Gate charge total Qg - 10 13 Gate plateau voltage V plateau - 5.5 - V DD=350 V, V GS=10 V, I D=1.8 A, R G=25 Ω ns Gate Charge Characteristics 1) V DD=420 V, I D=1.8 A, V GS=0 to 10 V nC V Pulse width limited by maximum temperature T j,max only 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.3 page 3 2005-02-21 SPN02N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 0.4 - - 5.4 - 0.82 1.05 V - 200 350 ns - 1.3 - µC - 9 - A - 200 - A/µs Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm Peak rate of fall of reverse recovery current di rr / dt T C=25 °C V GS=0 V, I F=0.4 A, T j=25 °C V R=420 V, I F=I S, di F/dt =100 A/µs T j=25 °C A Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. R th1 0.113 R th2 Value Unit typ. K/W C th1 0.0000144 0.156 C th2 0.000087 R th3 0.875 C th3 0.000123 R th4 3.63 C th4 0.0005 R th5 8.29 C th5 0.012 C th6 0.055) Ws/K 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 2.3 page 4 2005-02-21 SPN02N60C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 101 2 limited by on-state resistance 1.8 1 µs 10 µs 1.6 100 100 µs 1.4 I D [A] P tot [W] 1.2 1 1 ms -1 10 10 ms 0.8 DC 0.6 10-2 0.4 0.2 0 0 40 80 120 10-3 160 100 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 102 5 7V 20 V 6.5 V 0.5 4 101 0.2 6V 3 100 I D [A] Z thJS [K/W] 0.1 0.05 5.5 V 2 0.02 0.01 10-1 5V single pulse 1 4.5 V 4V 0 10-2 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 5 10 15 20 V DS [V] t p [s] Rev. 2.2 0 page 5 2004-10-04 SPN02N60C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 3 14 20 V 7V 2.5 4V 12 6.5 V 4.5 V 6V 5.5 V 5V 6V 5.5 V 10 R DS(on) [Ω] I D [A] 2 1.5 5V 8 20 V 6 1 4 4.5 V 0.5 2 4V 0 0 0 5 10 15 20 0 0.5 1 1.5 V DS [V] 2 2.5 3 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=1.1 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 8 6 7 25 °C 5 6 4 I D [A] R DS(on) [Ω] 5 4 3 98 % 3 150 °C 2 typ 2 1 1 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.3 0 2 4 6 8 10 V GS [V] page 6 2005-02-21 SPN02N60C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=1.8 A pulsed I F=f(V SD) parameter: V DD parameter: T j 101 12 150 °C, 98% 10 0.2 VDS(max) 25 °C 25 °C, 98% 8 I F [A] V GS [V] 0.8 VDS(max) 6 150 °C 100 4 2 10-1 0 0 2 4 6 8 10 0 0.5 Q gate [nC] 1 1.5 2 140 180 V SD [V] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=0.9 A; V DD=50 V parameter: T j(start) 2 60 1.75 50 1.5 40 E AS [mJ] I AV [A] 1.25 1 125 °C 0.75 30 25 °C 20 0.5 10 0.25 0 0 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 60 100 T j [°C] t AR [µs] Rev. 2.3 20 page 7 2005-02-21 SPN02N60C3 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(T j); I D=0.25 mA C =f(V DS); V GS=0 V; f =1 MHz 700 104 660 103 C [pF] V BR(DSS) [V] Ciss 620 102 Coss 101 580 Crss 100 540 -60 -20 20 60 100 140 180 0 100 200 300 400 500 V DS [V] T j [°C] 15 Typ. C oss stored energy E oss= f(V DS) 2 1.6 E oss [µJ] 1.2 0.8 0.4 0 0 100 200 300 400 500 600 V DS [V] Rev. 2.3 page 8 2005-02-21 SPN02N60C3 Definition of diode switching characteristics Rev. 2.3 page 9 2005-02-21 SPN02N60C3 SOT-223 Rev. 2.3 page 10 2005-02-21 SPN02N60C3 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 11 2005-02-21